j , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB755 description ? collector-emitter breakdown voltage- v(br)ceo=-150v(min) ? good linearity of hfe ? complement to type 2sd845 applications ? designed for power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c junction temperature storage temperature range value -150 -150 -5 -12 -1.2 120 150 -55-150 unit v v v a a w r c 1 2 3 pin i. base 2.collector 3. emitter mt-200 package dim a b c d f g h j k l n q r s u y mm win 21,00 35.80 5.60 1.04 3.10 1.90 3.60 0.55 2o.oo 2.90i 10.5o 24.00 2.90 2.00 6.90 8.90 max 21.70 36.70 6jzo 1.07 3.50 2.40 4.00 0.85 20.80 3-40 11.1o z4.so 3.m 2.20 7.10 9.10 n.i semi-conductors reserves the right lo change test conditions, parameter limits and package dimensions \\ithout notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time ofguinj; lo press. i limever, n.i semi-conductors assumes no responsibility lor any errors or omissions discovered in its use. n.i semi-conductor1- encoui'a.ues cnsloincrs to \erily that dataslieets are currcnl belore placing orders. quali^y semi-conductors
silicon pnp power transistor 2SB755 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) vee(on) icbo iebo pfe cob fi parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc= -30ma; !b= 0 le=-1ma;lc=0 lc= -5a; ib= -0.5a lc= -5a; vce= -5v vcb=-150v;ie=0 veb= -5v; lc= 0 lc= -1a; vce= -5v ie= 0; vcb= -10v; ftest= 1.0mhz lc=1a;vce=-10v min -150 -5 55 typ. 450 20 max -2.0 -1.5 -50 -50 160 unit v v v v ua ua pf mhz classifications r 55-110 0 80-160
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